Silicon- Based Nanoscale devices and structures from perspective of ut…
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" Nanometer scale semiconductor structures are expected to be widely used in the future telecommunication and information processing devices. Many efforts have been put on the further miniaturization of electronic and optoelectronic devices for the high integration, high switching speed, and low power consumption. In this talk, I will present several progresses recently made in ETRI on the silicon-based nanoscale devices and structures for electrical and optical applications.
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key processing technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffusion) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility Si/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the Si/Ge layer were developed for the ultra high speed Si/Ge HFET device.
As for the development of silicon optoelectronic material, we focused our research on the formation of silicon nanocluster from films of Si/SiO2 and Si/Si3N4 prepared by sputtering technique and successive heat treatments as well as on the formation of thin silicon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the silicon-based nanocluster layers were investigated and results will be discussed.
"
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key processing technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffusion) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility Si/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the Si/Ge layer were developed for the ultra high speed Si/Ge HFET device.
As for the development of silicon optoelectronic material, we focused our research on the formation of silicon nanocluster from films of Si/SiO2 and Si/Si3N4 prepared by sputtering technique and successive heat treatments as well as on the formation of thin silicon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the silicon-based nanocluster layers were investigated and results will be discussed.
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