[Sep 9, 2016] 강명호 교수 연구실 - Single-Layer Limit of Metallic Indium Overl…
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Journal Single-Layer Limit of Metallic Indium Overlayers on Si(111)
Professor in charge강명호
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Release date2016-09-09
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[Sep 9, 2016] 강명호 교수 연구실 - Single-Layer Limit of Metallic Indium Overlayers on Si(111)
Physical Review Letters 117, 116102 (2016)
전자구조이론연구실에서는 원자 한층 두께의 인듐(In) 금속막의 원자구조와 2차원 극한의 금속 물성을 규명하였다. 논문은 Physical Review Letters (저자: 박재환, 강명호) 에 게재되었다 (2016. 9. 09).
In 금속막은 대표적인 2차원 금속계로서 그 원자구조 규명이 초미의 관심사였는데, 2012년 PRL 논문에서 double-layer 구조를 규명한데 이어, 이번에 단원자층 구조 까지 해결함으로써 나노과학기술의 큰 진전을 이루었다. [그림: Si 표면 위의 In 2중층과 단원자층 구조]
Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one 7‾√×3‾√ phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other 7‾√×7‾√ phase with 1.43 ML, which indeed agree with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that the ultimate 2D limit of In overlayers may have been achieved in previous studies of double-layer In phases.