[Sep 9, 2016] 강명호 교수 연구실 - Single-Layer Limit of Metallic Indium Overl…
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Journal Single-Layer Limit of Metallic Indium Overlayers on Si(111)
Professor in charge강명호
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Release date2016-09-09
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[Sep 9, 2016] 강명호 교수 연구실 - Single-Layer Limit of Metallic Indium Overlayers on Si(111)
Physical Review Letters 117, 116102 (2016)
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전자구조이론연구실에서는 원자 한층 두께의 인듐(In) 금속막의 원자구조와 2차원 극한의 금속 물성을 규명하였다. 논문은 Physical Review Letters (저자: 박재환, 강명호) 에 게재되었다 (2016. 9. 09).
In 금속막은 대표적인 2차원 금속계로서 그 원자구조 규명이 초미의 관심사였는데, 2012년 PRL 논문에서 double-layer 구조를 규명한데 이어, 이번에 단원자층 구조 까지 해결함으로써 나노과학기술의 큰 진전을 이루었다. [그림: Si 표면 위의 In 2중층과 단원자층 구조]
Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one 7‾√×3‾√ phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other 7‾√×7‾√ phase with 1.43 ML, which indeed agree with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that the ultimate 2D limit of In overlayers may have been achieved in previous studies of double-layer In phases.